advertisment Advertisement
This ad will close in  seconds. Skip now
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement
Software & CAD

HMC788LP2E GaAs pHEMT MMIC Gain Block Amplifier

January 17, 2011
/ Print / Reprints /
| Share More
/ Text Size+

Darlington Amplifier Delivers up to +20 dBm Output Power

Chelmsford, MA, October 6, 2010 - Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, has introduced a new SMT pHEMT MMIC Driver Amplifier which is ideal for high linearity applications in cellular/4G, broadband, military and fixed wireless equipment applications from DC to 10 GHz.

The HMC788LP2E is a GaAs pHEMT MMIC Gain Block Amplifier which is rated from DC to 10 GHz. This internally matched Darlington amplifier delivers up to 14 dB gain, +20 dBm output P1dB, and up to +30 dBm output IP3. The active on-chip bias circuit allows the HMC788LP2E to exhibit excellent gain and output power stability over temperature, while consuming only 76 mA from a single +5 V supply. This 2x2 mm DFN packaged amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO port of many of Hittite’s single and double-balanced mixers. The wide bandwidth and simple application circuit makes the HMC788LP2E ideal for use in multi-band infrastructure applications such as software defined radios, and in point-to-point and test and measurement subsystems.

Samples and evaluation PC boards for all SMT packaged products are available from stock and can be ordered via the company’s e-commerce site or via direct purchase order. Released data sheets are available on-line by clicking the link below our logo on this page.

Post a comment to this article

Sign-In

Forgot your password?

No Account? Sign Up!

Get access to premium content and e-newsletters by registering on the web site.  You can also subscribe to Microwave Journal magazine.

Sign-Up

advertisment Advertisement