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RFMD® announced that its two-placement linear EDGE chipset and Bluetooth® system-on-chip (SoC) solution support a recently announced, EDGE-enabled mobile device powered by Danger Inc. and manufactured by Sharp Corp.
The highly anticipated, multi-function device, which leverages Danger's advanced software service platform and Sharp's hardware design capabilities, is currently available in the US through a major wireless carrier. "We are very excited to support innovative companies such as Danger and Sharp," said Bob Bruggeworth, president and CEO of RFMD. "Our leadership in EDGE power amplifiers and transceivers and our ability to deliver complete Bluetooth hardware and software solutions are enabling RFMD to expand our semiconductor content in many of today's feature-rich devices."
RFMD's total semiconductor content in the highly anticipated device includes its high power and high efficiency RF3145LP linear EDGE power amplifier (PA) module, its RF2705G modulator and PA driver and its SiW3500 Bluetooth SoC solution.
The dual-mode RF3145LP linear EDGE PA module minimizes required board space and allows for highly integrated power control and band select capabilities. The RF2705G is a low noise, multi-mode, quad-band direct I/Q to RF modulator and PA driver designed to support handset applications requiring multiple modes of operation. When combined, the RF3145LP and RF2705G provide handset manufacturers a complete, two-placement EDGE transmitter solution.
RFMD's SiW3500 provides proven interoperability with other Bluetooth devices, such as wireless headsets. The on-chip RF matching circuit facilitates direct on-board design, accelerating time-to-market while lowering the cost of implementation. RFMD's portfolio of high performance, low power Bluetooth SoC solutions are optimized to deliver the advanced capabilities required by today's feature-rich mobile devices.