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LDMOS FET MRF6VP121KH

January 17, 2011
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965-1215 MHz, 1000 Watts Peak, 50V Pulsed Lateral N-Channel RF Power MOSFETs

RF Power transistors, MRF6VP121KHR6 and MRF6VP121KHSR6, are designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications.

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