LDMOS FET MRF6V12250H



960-1215 MHz, 275 Watts, 50V Pulsed Lateral N-Channel RF Power MOSFETs

RF Power transistors, MRF6V12250HR3 and MRF6V12250HSR3, are designed for applications operating at frequencies between 960 and 1215 MHz. These devices are suitable for use in pulsed applications.

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