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LDMOS FET MRF6V10010N

January 17, 2011
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960-1400 MHz, 10 Watts, Peak, 50V Pulsed Lateral N-Channel RF Power MOSFETs

The MRF6V10010NR4 is an RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications.

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