advertisment Advertisement
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement

LDMOS FET MRF6V2010N

January 17, 2011
/ Print / Reprints /
| Share More
/ Text Size+


10-450 MHz, 10 Watts, 50V Lateral N-Channel Broadband RF Power MOSFETs

The MRF6V2010NR1 and MRF6V2010NBR1 are designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

Post a comment to this article

Sign-In

Forgot your password?

No Account? Sign Up!

Get access to premium content and e-newsletters by registering on the web site.  You can also subscribe to Microwave Journal magazine.

Sign-Up

advertisment Advertisement