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HMC-ALH508, 3-stage GaAs HEMT MMIC LNA
Hittite has introduced a new GaAs HEMT MMIC low noise amplifier die, the HMC-ALH508, which will allow designers to address E-band applications from 71 to 86 GHz. The HMC-ALH508 LNA die is ideal for automotive radar, military and space applications, wireless LANs, and ultra high capacity E-band communication systems.
The HMC-ALH508 is a three stage GaAs HEMT MMIC Low Noise Amplifier (LNA) chip which operates between 71 and 86 GHz, replacing the HMC-ALH459. The HMC-ALH508 features 13 dB of small signal gain, 4.5 dB of noise figure and an output power of +7 dBm at 1 dB compression.
The HMC-ALH508 operates from two supply voltages at 2.1V and 2.4V respectively, while consuming only 30 mA of supply current. All bond pads and the die backside are Ti/Au metallized and the amplifier is fully passivated for reliable operation. This versatile LNA is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications.
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