Power Amplifier XP1050-QJ
Mimix Broadband, Inc. Introduces 7.1 to 8.5 GHz QFN Packaged, Linear Power Amplifier Delivering 49 dBm OIP3. Features On-Chip Temperature Compensated Power Detector.
November 24, 2008, Houston, Texas - Mimix Broadband, Inc. introduces today a QFN packaged GaAs MMIC linear power amplifier with 49 dBm OIP3 and 14.5 dB small signal gain. This power amplifier, identified as XP1050-QJ, covers 7.1 to 8.5 GHz and includes an integrated temperature compensated on-chip power detector. The amplifier comes in an RoHS compliant, industry standard, fully molded 6x6mm QFN package and includes on-chip ESD protection structures and DC bypass capacitors to ease implementation and volume assembly. The XP1050-QJ is well suited for wireless communications applications such as point-to-point radio, LMDS, SATCOM and VSAT applications.
"XP1050-QJ is the industry's first standard QFN power amplifier that delivers high gain, high power and 49 dBm OIP3 linearity performance for the 7.1 to 8.5 GHz band," stated Paul Beasly, Product Manager, Mimix Broadband, Inc. "The device offers an attractive alternative to the traditional discrete power FET devices by providing advantages through standard packaging, higher gain, broadband performance and fully matched design. In conjunction with our XP1035-QH driver amplifier, Mimix can provide the ideal transmit lineup for high linearity and power applications."
Mimix performs 100% RF testing on the XP1050-QJ. Samples and production quantities are available in four weeks. Technical support is also available from Mimix's applications engineers at 281.988.4600. The datasheet and additional product information can be obtained from the Mimix Broadband website at www.mimixbroadband.com.