* Integrated Gain, Doubler and Driver Stages * Single Positive Supply, +5V * Integrated Bypassing Capacitor * +20.0 dBm Output Saturated Power * 35.0 dBc Fundamental Suppression * On-Chip ESD Protection * 100% RF, DC and Output Power Testing * 3x3 QFN Package * RoHS Compliant

Mimix Broadband’s 13.5-17.0 / 27.0-34.0 GHz GaAs MMIC doubler integrates a gain stage, passive doubler and driver amplifier onto a single device. The XX1007-QT has a self-biased architecture requiring a single positive supply (+5V) only and integrated on-chip bypassing and DC blocking capacitors eliminating the need for any external components. This device uses Mimix Broadband’s 0.15um GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. XX1007-QT has integrated ESD structures for protection and comes in a low cost 3x3mm QFN package. The device is well suited for Millimeter wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.