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Software & CAD

AWR Announces Microwave Office Library for Freescale’s RF High-Power Models

September 27, 2010
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EUROPEAN MICROWAVE WEEK, PARIS, FRANCE – September 27, 2010 - AWR Corporation, the innovation leader in HF EDA, today announced the availability of a Microwave Office® 2010 design software library for Freescale Semiconductor’s RF high-power models. Freescale’s validated RF high-power models enable power amplifier and base station designers to meet increasing performance demands with a cost-effective and timely solution.

Freescale’s RF high-power model library includes electro-thermal product models. These include the transistor model (FET2 and MET), with package, bond wire, and internal matching network effects. The FET2 and MET models for RF high-power transistors and RF integrated circuits (RFICs) are nonlinear models that predict electrical, thermal and dynamic self-heating effects.

“We’ve been working in close collaboration with AWR’s engineering and model development team to provide a streamlined flow for efficiently delivering Freescale models to our customers,” said Gavin Woods, vice president and general manager of Freescale Semiconductor’s RF Division. “This has resulted in the availability of our RF high-power models concurrently for both AWR’s Microwave Office software and Agilent’s Advanced Design Software.”

The release of the library for Freescale’s RF high-power models has been driven by increasing customer adoption of AWR’s Microwave Office software. Freescale’s RF high-power models are available for download now at: www.freescale.com/rf/models.

Pricing and Availability
Freescale RF high-power models are free for use within Microwave Office software. For active, licensed AWR customers, the model library can be found at: www.freescale.com/rf/models

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