GREENSBORO, N.C., May 13, 2010 (GlobeNewswire via COMTEX News Network) -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance RF components and compound semiconductor technologies, today unveiled a highly integrated new front end module (FEM) that delivers a complete integrated solution for handset/handheld WiFi 802.11b/g/n and Bluetooth(R) systems.
RFMD's RF5755 FEM integrates a 2.5GHz Power Amplifier (PA), multi-throw switch (SP3T), Low Noise Amplifier (LNA) and power detector coupler. The RF5755 also features integrated matching circuitry with output harmonic attenuation, reducing the bill of materials (BOM) and manufacturing costs. The RF5755 is packaged in a small 16-pin QFN package (3mm x 3mm x 0.5mm), minimizing layout area in customer applications.
The highly integrated RF5755 delivers many features and customer benefits: high linear output power (20dBm) allowing higher efficiency and lower EVM for 11n applications; the ability to switch between WiFi transmit, WiFi receive, or Bluetooth (transmit or receive); reduced need for a high loss/attenuation filter at the FEM output; high IIP3 and gain; simultaneous receive of WiFi and Bluetooth with positive gain in both paths (utilizing the SPST switch after the LNA); and a direct-to-battery connection eliminating the need for additional DC circuitry. Additionally, the integrated power detector coupler decreases sensitivity to voltage supply, temperature, and VSWR and improves the accuracy of the closed loop power control.
The RF5755 FEM is fully tested, including EVM and all DC parameters, providing a reduced size, single-placement solution that minimizes system footprint, reduces costs, and accelerates time-to-market for high linear output power applications.