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Industry News

High Voltage HBTs for 3G W-CDMA Base Station Power Amplifiers

October 14, 2004
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A new high voltage, high power InGaP HBT discrete device has been developed that can significantly improve the efficiency of power amplifiers (PA) in cellular base stations. This new technology provides superior performance compared to silicon LDMOS. A 30-watt device driven by a predistorted W-CDMA signal has demonstrated 45...
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