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AWR and NXP Offer RF Small-Signal Design Kit for NXP SiGe:C BiCMOS Process
December 3, 2009: AWR, the innovation leader in high-frequency electronic design automation (EDA), and NXP Semiconductor have announced that a small-signal RF design kit is available for NXP’s SiGe:C silicon germanium bipolar junction complementary metal oxide semiconductor (BiCMOS) process. The design kit installs easily within AWR’s Microwave Office software and functions as an integrated part of the simulation environment.
“Microwave Office Design Kit Version v1.0” provides models for RF components such as wideband devices, diodes, junction FETs, dual-gate MOSFETs, and MMICs, and includes SPICE parameters, S parameters, noise parameters, and data sheets. NXP’s BiCMOS process speeds the migration from GaAs to silicon components with low-noise performance and IP availability. The process is optimized to allow users to incorporate more functionality into devices at competitive costs and in less space. It delivers high levels of integration and performance at high frequencies that can enhance next-generation RF products such as low-noise amplifiers, medium-power amplifiers, and local oscillators used in wireless user equipment and infrastructure.
Microwave Office Design Kit Version v1.0 and its installation manual are available on the NXP Web site at http://www.nxp.com/models/index.html