Skyworks Introduces Industry’s First Multi-band, Multi-mode FDD/TDD Power Amplifier for 4G LTE Applications
Next-Generation Technology Targeting China and Other Global Regions.
WOBURN, MASS. − Dec. 16, 2008--Skyworks Solutions, Inc. (NASDAQ:SWKS), an innovator of high performance analog and mixed signal semiconductors enabling mobile connectivity, today introduced the industry’s first multi-mode and multi-band frequency division duplex (FDD)/time division duplex (TDD) power amplifier module (PAM) for fourth generation (4G) long term evolution (LTE) applications.
Skyworks’ PAM is also the first product available specifically targeting LTE-TDD bands 38 and 40. LTE TDD is expected to become the dominant 4G standard mobile operators utilize in China and other parts of the world. According to Strategy Analytics, the global LTE handset market is expected to reach 150 million units by 2013.
“Skyworks’ new multi-mode, multi-band LTE power amplifier enables enhanced talk, viewing and broadcast times, while complying with the stringent linearity requirements across wide frequency ranges,” said Dr. Gene A. Tkachenko, senior director of engineering responsible for LTE development at Skyworks. “With this latest product offering, we continue to demonstrate our leadership position in 4G and our commitment to providing innovative, cost-effective wireless solutions to our customers.”
About the SKY77441
The SKY77441 is a fully matched 16-pin surface mount module developed for LTE FDD (Band 7) and TDD (Bands 38 and 40) applications and covering the 2.3 to 2.7 gigahertz (GHz) range. It delivers over 26 decibels (dBm) of linear power output with full LTE resource block allocation under either quadrature phase-shift keying (QPSK), or 16 quadrature amplitude modulations (QAM), and over 28 dBm of linear output power under wideband code division multiple access (WCDMA) modulation. Small and efficient, the LTE FEM integrates the input and output matching networks, the power amplification stages, and the power detection in a single 4 x 4 x 0.85 millimeter (mm) package.
Integration of the PAM simplifies the design of the 4G-compatible handset radios and data cards, as all the active radio frequency (RF) circuitry is optimized within the single module component. Using Skyworks’ advanced indium gallium phosphide (InGaP) bipolar field effect transistor (BiFET) design and Skyworks Green TM packaging solutions, the SKY77441 also supports low-operating voltage down to 3 volts (V) with high power added efficiency, high reliability and quality.
Pricing and Availability
Samples of the SKY77441 PA are currently available, with volume production scheduled to begin in 2009. For customized pricing, please contact email@example.com.