RFMD® TO SHOWCASE NEW WIRELESS INFRASTRUCTURE PRODUCTS AND DEMONSTRATE GaN HIGH POWER PRODUCTS AT IEEE MTT-S 2007
HONOLULU, HI, JUNE 4, 2007 – (IEEE MTT-S) – RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced it will showcase its new portfolio of GaAs pHEMT low noise amplifiers (LNAs) for wireless infrastructure and provide a demonstration of its GaN high power products for commercial and military applications at the IEEE MTT-S International Microwave Symposium 2007, June 5-7, in Honolulu, Hawaii. RFMD will showcase the RF386X family of LNAs, which are ideal for the cellular and WiMAX infrastructure markets. These new broadband LNAs offer capabilities from 700MHz to 3800MHz and provide the best-in-class combination of noise and linearity performance, as compared to competing solutions. The RF386X family of LNAs is ideally suited for first stage low noise and linear driver amplification targeting CDMA, PCS, DCS, UMTS, WLAN and WiMAX applications. In addition, RFMD will host two RF product demonstrations at its trade show booth featuring its first generation 48V GaN transistor technology. First, RFMD will demonstrate the RF power performance of the RF3934, a 48V GaN 120W power transistor in RFMD’s RF393X product family. The RF393X product family offers power performance from 10W to 120W and very wide tunable bandwidth—demonstrating the superior combination of high power and bandwidth offered by GaN technology versus competing GaAs and silicon technologies. The RF393X family offers very high peak efficiency and is suitable for applications such as broadcast, cellular wireless infrastructure, high power radar, aerospace and avionics. Second, RFMD will demonstrate the RF power performance of the RF3825, a 28V GaN 10W broadband PowerIC in RFMD’s RF382X product family. The RF3825 delivers power performance over a frequency range of 225MHz to 1800MHz and is the widest bandwidth product in the RF382X product family. The RF3825 demonstrates 10W power performance over multiple octaves in frequency in a single, size-reduced solution that is more compact than competing solutions. The RF382X family offers very high peak efficiency across the operating bandwidth and is suitable for applications such as 3G cellular infrastructure, military communications, software definable radios (SDRs) and public mobile radio. Additionally, the Company will showcase its portfolio of highly integrated RF solutions, including RFMD’s industry-leading cellular front ends for GSM/GPRS, EDGE, CDMA and WCDMA handsets, its POLARIS™ TOTAL RADIO™ RF solutions for GSM/GPRS and EDGE handsets, its WLAN front ends and its software-based GPS solutions. RFMD will showcase its industry-leading product portfolio of cellular front end solutions and wireless infrastructure products at the IEEE MTT-S International Microwave Symposium 2007, June 5-7, at the Honolulu Convention Center in Honolulu, Hawaii, in Booth 801.