RFMD Introduces Family of GaN Power Amplifiers for WCDMA, WiMAX and Public Mobile Radio Applications
GREENSBORO, NORTH CAROLINA- November 28, 2006 - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced the introduction and sampling of Gallium Nitride (GaN) wideband power amplifier ICs to Tier 1 WiMAX, cellular base station and Public Mobile Radio (PMR) customers. The family achieves superior performance in gain, output power and efficiency across a broad range of frequencies as compared to currently available gallium arsenide (GaAs) and silicon LDMOS products. "Our GaN process technology positions RFMD to provide customers with the high-power, broadband solutions needed to meet growing customer demand for more cost-effective and more efficient deployment of next-generation wireless infrastructure," said Jeff Shealy, RFMD Vice President, Infrastructure Product Group. "RFMD's GaN power ICs deliver a simple, single amplifier solution for wideband applications dependant on maximizing power, bandwidth and efficiency." The new family includes multiple parts, RF3821 (8W P1dB WiMAX PA, 2.3-2.7GHz), RF 3823 (8W P1dB WiMAX PA, 3.3-3.8GHz), RF3822 (14W saturated power Public Mobile Radio PA, 100-1000MHz), and RF 3820 (8W P1dB cellular PA, 1.8-2.2GHz). Both WiMAX power amplifier ICs provide 29dBm linear output power with 2.5% EVM and flat gain of 11dB across multiple bands. The cellular power amplifier IC provides 27dBm linear output power with -50dBc ACPR and flat gain of 13dB across DCS/PCS/W-CDMA frequency bands. The PMR power amplifier IC provides 14W to 12W saturated output power and flat gain of 11.5dB with PAE of 65% mid band at 500MHz. The designs operate on a 28V rail and include internal-matching elements to deliver a 50-ohm interface over the band of operation and are packaged in a thermally enhanced AlN package for efficient heat removal. RFMD anticipates production shipments of the GaN power amplifiers will commence in calendar year 2007. Additional information about the features and pricing of the GaN process technology can be found by visiting www.rfmd.com.