WIN Semiconductors Releases Its Next Generation 0.15 μm Power PHEMT Technology Platform
Extending its lead in GaAs PHEMT technology, WIN Semiconductors Inc. has released a next generation 0.15 μm PHEMT process, named PP15-50/PP15-51. Win will spotlight this process, which is for high frequency power products operating at up to 6 V, at EuMW 2011 in Manchester. Win is exhibiting in booth 223.
The PP15-50 and PP15-51 technologies leverage an optimized device structure and a proven 150 mm manufacturing process to provide state-of-the-art performance through 40 GHz. The process is an extension to WIN’s highly successful PP15 technology platform, and demonstrates excellent device level performance with over 80 GHz, power density of 850 mW/mm at 29 GHz, with more than 10 dB gain and 50 percent power added efficiency. The process is designed to operate at 6 V drain bias, and exhibits typical breakdown voltages of 16 V, with a process minimum of 14 V, and provides substantial operating margin for ultra-high product reliability.The technology is ideally suited for a range products including saturated and linear amplifiers for the point to point market, radar, instrumentation, EW and optical driver applications. Furthermore this platform is available on 50 μm (PP15-50) and 100 μm (PP15-51) substrate thicknesses, with optional BCB scratch protection.
Process Design Kits for Agilent’s ADS and AWR’s Microwave Office will be on WIN website, and active device samples are available now.