Richardson RFPD Inc. announced a new, two-stage broadband low noise amplifier, CHA3218-99F/00, designed by United Monolithic Semiconductors (UMS). The GaAs MMIC is optimized for use in 2 to 18 GHz defense and space applications, and features 24 dB of gain while providing very low noise figure and high linearity.
The part is also well-suited for a wide range of commercial microwave and millimeter-wave applications and systems. It is manufactured using a robust 0.15 µm gate length pHEMT process, and is available as a bare die.
Key features include a noise figure as low as 1.8 dB (at 14 GHz), output power of +15 dBm (at P1dB) and high linearity (OIP3 = +25 dBm). It is RoHS compliant with a typical bias of 4V drain supply, 120mA drain current, -0.45V gate supply. The chip size is 3.07 x 1.57 x 0.1 mm.