- Buyers Guide
Aerospace & Defense Electronics Supplement
Early Returns: U.S. Export Control Reform Positive
A&D Test & Measurement
Efficient Design and Analysis of Airborne Radomes
At IMS 2011 in Baltimore, Mitsubishi Electric Corp. (Booth 510) will present its gallium nitride high-electron mobility transistor (GaN HEMT) power amplifier for C-band satellites featuring the world's highest power-added efficiency (PAE) rating, 67 percent, an increase of more than seven points compared to conventional amplifiers. The amplifier is expected to lead to smaller and lighter transmitter devices to help microwave communication satellites save power.
Get access to premium content and e-newsletters by registering on the web site. You can also subscribe to Microwave Journal magazine.