Industry News

Mitsubishi Develops New GaN HEMT Amplifier

At IMS 2011 in Baltimore, Mitsubishi Electric Corp. (Booth 510) will present its gallium nitride high-electron mobility transistor (GaN HEMT) power amplifier for C-band satellites featuring the world's highest power-added efficiency (PAE) rating, 67 percent, an increase of more than seven points compared to conventional amplifiers. The amplifier is expected to lead to smaller and lighter transmitter devices to help microwave communication satellites save power.


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