TowerJazz Touts Third Generation SiGe BiCMOS Technology
At IMS 2011, TowerJazz (Booth 715) will be spotlighting its 260 GHz, 0.18 um, Third Generation SiGe BiCMOS technology. It is optimized for next generation needs for high speed interfaces in communication protocols, including automotive collision avoidance systems, millimeter-wave radar and GHz imaging. The technology improves performance while reducing noise and power consumption of key building blocks.
In addition, TowerJazz will introduce its CMOS SOI switch technology. TowerJazz touts the attractiveness of thick-film SOI for the design of multimode cellular switches and monolithically integrated RF transmit modules, compared to the incumbent technologies of GaAs PHEMT, Silicon-on-Sapphire (SOS) and thin-film SOI.