High Power Amplifier
The model XP1017 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two-stage high power amplifier that integrates an on-chip temperature-compensated output power detector. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (PHEMT) device model technology, this device covers the 30 to 36 GHz frequency bands and delivers 33 dBm OIP3 and 16 dB small-signal gain. The balanced design and Lange couplers help achieve good input and output match. This amplifier is well suited for millimeter-wave point-to-point radio, LMDS and SATCOM applications.