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Although spending on RF power semiconductors in wireless infrastructure markets has continued to stagnate, other markets—notably the military—are seeing increased activity. Also, according to a new study from ABI Research, Gallium Nitride—long seen as a promising new “material of choice” for RF power semiconductors—is continuing to gain some market traction. Gallium Nitride (GaN) increased its market share in 2010, and is expected to do the same in 2011. Although its adoption has not been as rapid as originally expected, it is nonetheless forecast to be a significant force by 2016.
Other than wireless infrastructure, the vertical market showing the strongest uptick in the RF power semiconductor business has been the military. While the producers of these devices are located in the major industrialized countries, the military market is now so global that equipment buyers may come from anywhere.
“RF Power Semiconductors” examines RF power semiconductor devices that have power outputs of greater than 5 W and operate at frequencies of up to 3.8 GHz, which represent the bulk of applications in use today.
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