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Industry News / Semiconductors / Integrated Circuits

Freescale Broadens RF LDMOS Portfolio

November 17, 2010
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Freescale Semiconductor unveiled three advanced industrial RF power transistors at an ideal price/performance ratio for original equipment manufacturers (OEM). The enhanced rugged capability combined with leading-edge RF performance enables OEMs to realize significant cost savings at the system level for industrial and commercial aerospace designs.

Freescale’s MRFE6VP5600H/S and MRFE6VP61K25H/S 50 V LDMOS power transistors offer enhanced ruggedness to support harsh environments in highly mismatched applications such as plasma generators, CO2 lasers and MRI power amplifiers. The MRF8P29300H/S 30 V LDMOS power transistor is designed for pulsed S-band applications such as air traffic control (ATC) and also can support modulated communications applications.

“The introduction of our latest 30 V and 50 V LDMOS power transistors underscores Freescale’s commitment to developing leading-edge technologies in the RF industrial and commercial aerospace markets,” said Ritu Favre, Vice President and General Manager of Freescale’s RF Division.

“All three devices allow designers to make the critical step to Freescale’s LDMOS and take advantage of outstanding performance and ruggedness. Designing with LDMOS technology offers our customers robust and efficient solutions with higher gain to build more reliable and cost-efficient RF-based applications.”


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