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Industry News

Bias-T Up to 100 W and 7 GHz for GaN

November 10, 2010
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Tecdia specializes in manufacturing high-current bias-Ts with low insertion loss and low return loss. With the increased activity in GaN devices and technologies, Tecdia has developed the SBT-GF0702-F bias-T for high power GaN devices. The SBT-GF0702-F includes coaxial bias-T devices with power handling of 50 W (bias current 20 A, bias voltage 30 V) or 100 W (bias current 10 A, bias voltage 150 V) covering frequencies from 2 to 7 GHz with a return loss of 20 dB minimum and insertion loss of 0.5 maximum. Figure 1 shows the S-parameters versus frequency for the SBT-GF0702-F; Table 1 summarizes its specifications.

Figure 1 S-parameters for SBT-GF0702-F.


The SBT-GF0702-F is housed in a connectorized unit measuring 50 × 52 × 20 mm (excluding connectors) with an APC-7 RF connector and BNC-R (female) DC connector. Figure 2 shows the dimensions of the unit that weighs 200 g.

Tecdia also manufactures bias-T products for GaN applications, including a 10 W (TBT-06M20-F) and 25 W (TBT-H06M20-F) device covering 20 MHz to about 6 GHz in connectorized units along with the SMBT-06M20L(or R)-F surface-mount bias-T covering 20 MHz to about 6 GHz and up to 5 W.

Tecdia’s model TBT-H06M20 bias-T was selected by Cree for performance data tests of its GaN HEMT MMIC 25 W amplifiers. It was designed to meet the high power and wide bandwidth (20 MHz to 6 GHz) of Cree’s model CMPA0060025F.

Figure 2 Outline drawing for SBT-GF0702-F.

Tecdia,
Santa Clara, CA
(408) 748-0100
www.tecdia.com
RS No. 302

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